Carbon nanotube electron emitters with a gated structure using backside exposure processes

被引：156

作者：

Chung, DS ^{[1
]}

Park, SH

Lee, HW

Choi, JH

Cha, SN

Kim, JW

Jang, JE

Min, KW

Cho, SH

Yoon, MJ

Lee, JS

Lee, CK

Yoo, JH

Kim, JM

Jung, JE

Jin, YW

Park, YJ

You, JB

机构：

[1] Samsung Adv Inst Technol, SDI, NCRI, FED Project Team, Suwon 440600, South Korea

[2] Sungkyunkwan Univ, Dept Mat Sci, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Dept Vacuum Sci & Technol, Suwon 440746, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 21期

关键词：

D O I：

10.1063/1.1480104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated fully vacuum-sealed 5 in. diagonal carbon nanotube field-emission displays of a gated structure with reliable electron emission characteristics. Single-walled carbon nanotube tips were implemented into the gate structure using self-aligned backside exposure of photosensitive carbon nanotube paste. An onset gate electrode voltage for emission was about 60 V and the luminance as high as 510 cd/m(2) was exhibited under an application of 100 V and 1.5 kV to gate electrode and anode, respectively. (C) 2002 American Institute of Physics.

引用

页码：4045 / 4047

页数：3

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