Electronic structures of boron nanoribbons

被引：52

作者：

Ding, Yi ^{[1
,2
]}

Yang, Xiaobao ^{[1
,2
,3
]}

Ni, Jun ^{[1
,2
]}

机构：

[1] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

[2] Tsinghua Univ, Key Lab Atom & Mol Nanosci, Minist Educ, Beijing 100084, Peoples R China

[3] City Univ Hong Kong, Dept Phys & Mat Sci, Ctr Super Diamond & Adv Films, SAR, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 04期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2965803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using first principles calculations, we investigate the electronic properties of boron nanoribbons. The boron nanoribbons are constructed from the stable boron sheet. The bare boron nanoribbons with different edges are metals. The boron nanoribbons with two-hydrogen passivated on the zigzag edges become semiconductors and are more stable than the one-hydrogen passivated ones. The band gaps are within the range of 0.5 eV and there is an oscillatory variation in the band gaps with the change of widths due to the even-odd number of nanoribbon widths. (C) 2008 American Institute of Physics.

引用

页数：3

共 19 条

[1]

[Anonymous], PHYS PROPERTIES CARB

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