Spin-polarized current in semimagnetic semiconductor heterostructures

被引：17

作者：

Chitta, VA ^{[1
]}

Maialle, MZ ^{[1
]}

Leao, SA ^{[1
]}

Degani, MH ^{[1
]}

机构：

[1] Univ Sao Francisco, Fac Engn, BR-13251900 Itatiba, SP, Brazil

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 19期

关键词：

D O I：

10.1063/1.124033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A semimagnetic semiconductor tunneling device is proposed as a spin filter. This device, which gives spin-polarized electron current, is obtained by choosing different layers of II-VI compounds, with magnetic moments of substitutional ions of Mn(2+) in some of the layers. We present a theoretical calculation of the tunneling current for the device, in which electron spin-flip scattering produced by the thermal fluctuations of the magnetic moments is accounted for and found to be inefficient in depolarizing the current. A different system is also investigated to show more clearly the effects of spin-flip scattering on the tunneling current. (C) 1999 American Institute of Physics. [S0003-6951(99)02519-X].

引用

页码：2845 / 2847

页数：3

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