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Comparison between optical proximity effect of positive and negative tone patterns in KrF lithography
被引：13
作者：
Fujimoto, M
Hashimoto, T
Uchiyama, T
Matsuura, S
Kasama, K
机构：
来源：
OPTICAL MICROLITHOGRAPHY X
|
1997年
/
3051卷
关键词：
optical proximity effect;
positive tone line patterns;
negative tone line patterns;
KrF lithography;
NA;
sigma;
CD variation;
DOF;
off-axis illumination;
attenuated phase-shift mask;
D O I：
10.1117/12.275991
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
In this paper, the optical proximity effect(OPE) of positive and negative tone line patterns is compared under a variety of exposure conditions. 0.25 mu m lines with various pitch sizes were printed by a KrF stepper, and the CD variation as a function of pitch was evaluated. We found that the OPE was suppressed significantly in negative patterns under various conditions. The effect of resolution enhancement techniques on the OPE is also investigated. We found that negative patterning with the combination of off-axis illumination and attenuated phase-shift masks not only improved DOF but also gave a small OPE.
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页码：739 / 750
页数：4
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