Fabrication of flexible device based on PAN-PZT thin films by laser lift-off process

被引：33

作者：

Do, Young Ho ^{[1
]}

Kang, Min Gyu ^{[1
]}

Kim, Jin Sang ^{[1
]}

Kang, Chong Yun ^{[1
,2
]}

Yoon, Seok Jin ^{[3
]}

机构：

[1] Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea

[2] Korea Univ, IT NS, KU KIST Sch, Seoul 136701, South Korea

[3] Korea Inst Sci & Technol, Res Plannig & Coordinat Div, Seoul 136791, South Korea

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2012年 / 184卷

基金：

新加坡国家研究基金会;

关键词：

Films process; Ferroelectric properties; PZT; Functional applications; Laser lift-off; TRANSPARENT; TRANSISTORS; SEMICONDUCTORS; ELECTRONICS; TFT;

D O I：

10.1016/j.sna.2012.06.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ferroelectric properties of flexible devices based on 0.05Pb(Al0.5Nb0.5)O-3-0.95Pb(Zr0.52Ti0.48)O-3 + 0.7 wt.%Nb2O5 + 0.5 wt.%MnO2 (PAN-PZT) thin films, which were fabricated using a laser lift-off (LLO) process, were investigated. The flexible devices based on PAN-PZT thin films were coated with a sacrificial layer, which prevented or minimized damage during LLO process. The structural and electrical properties of the PAN-PZT thin films before and after LLO process demonstrated that the crystallographic and ferroelectric properties of the device were retained after LLO process. Flexible devices based on PAN-PZT thin films coated with a sacrificial layer may be fabricated using the LLO process for the production of flexible electronic devices. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：124 / 127

页数：4

共 17 条

[1] Flexible active-matrix electronic ink display [J].

Chen, Y ;

Au, J ;

Kazlas, P ;

Ritenour, A ;

Gates, H ;

McCreary, M .

NATURE, 2003, 423 (6936) :136-136

[2] Mechanical stability of poly-Si TFT on metal foil [J].

Cheon, Jun Hyuk ;

Bae, Jung Ho ;

Jang, Jin .

SOLID-STATE ELECTRONICS, 2008, 52 (03) :473-477

[3] Low-temperature laser processes for synthesizing (100)-textured Pb(Zr,Ti)O3 thin films on Si substrate [J].

Chu, YH ;

Lin, SJ ;

Liu, KS ;

Lin, IN .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (05) :1059-1063

[4] Temperature Field Analysis for PZT Pyroelectric Cells for Thermal Energy Harvesting [J].

Hsiao, Chun-Ching ;

Ciou, Jing-Chih ;

Siao, An-Shen ;

Lee, Chi-Yuan .

SENSORS, 2011, 11 (11) :10458-10473

[5] Fabrication of fully transparent nanowire transistors for transparent and flexible electronics [J].

Ju, Sanghyun ;

Facchetti, Antonio ;

Xuan, Yi ;

Liu, Jun ;

Ishikawa, Fumiaki ;

Ye, Peide ;

Zhou, Chongwu ;

Marks, Tobin J. ;

Janes, David B. .

NATURE NANOTECHNOLOGY, 2007, 2 (06) :378-384

[6]

Kelly MK, 1997, PHYS STATUS SOLIDI A, V159, pR3, DOI 10.1002/1521-396X(199701)159:1<R3::AID-PSSA99993>3.0.CO

[7]

2-F

[8]

Kingery W.D., 1976, INTRO CERAMICS, P155

[9]

Lee C.H., 2010, J APPL PHYS, V108

[10] World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT [J].

Lee, Je-hun ;

Kim, Do-hyun ;

Yang, Dong-ju ;

Hong, Sun-young ;

Yoon, Kap-soo ;

Hong, Pil-soon ;

Jeong, Chang-oh ;

Park, Hong-sik ;

Kim, Shi Yul ;

Lim, Soon Kwon ;

Kim, Sang Soo ;

Son, Kyoung-seok ;

Kim, Tae-sang ;

Kwon, Jang-yeon ;

Lee, Sang-yoon .

2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III, 2008, 39 :625-+

← 1 2 →