Photovoltaic Schottky ultraviolet detectors fabricated on boron-doped homoepitaxial diamond layer

被引：42

作者：

Liao, MY

Koide, Y

Alvarez, J

机构：

[1] NIMS, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

[2] NIMS, Int Ctr Young Scientists, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 03期

关键词：

D O I：

10.1063/1.2166490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A photovoltaic diode using tungsten carbide (WC) Schottky contact for deep ultraviolet (DUV) light detection is developed using a lightly boron-doped homoepitaxial diamond layer. The photodiode shows a quick dc response time lower than an instrumental time constant of 0.3 s. The responsivity varies linearly with the DUV light intensity. A discrimination ratio of 10(5) between 210 nm and visible light is achieved at zero bias. The short-circuit photocurrent at 220 nm decreases with increasing the temperature from 300 to 373 K, whereas the Schottky barrier height under illumination remains unchanged. Numerical and experimental analyses reveal that the interface states between diamond and WC play a major role in reducing the zero-bias responsivity at elevated temperatures. (c) 2006 American Institute of Physics.

引用

收藏

页码：1 / 3

页数：3

相关论文

共 14 条

[1] Synthesis and characterization of a single-crystal chemical-vapor-deposition diamond particle detector [J].

Balducci, A ;

Marinelli, M ;

Milani, E ;

Morgada, ME ;

Pucella, G ;

Tucciarone, A ;

Verona-Rinati, G ;

Angelone, M ;

Pillon, M .

APPLIED PHYSICS LETTERS, 2005, 86 (21) :1-3

[2] Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition [J].

Balducci, A ;

Marinelli, M ;

Milani, E ;

Morgada, ME ;

Tucciarone, A ;

Verona-Rinati, G ;

Angelone, M ;

Pillon, M .

APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3

[3] Temperature dependence on current-voltage characteristics of nickel/diamond Schottky diodes on high quality boron-doped homoepitaxial diamond film [J].

Chen, YG ;

Ogura, M ;

Okushi, H .

APPLIED PHYSICS LETTERS, 2003, 82 (24) :4367-4369

[4] Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration [J].

De Sio, A ;

Achard, J ;

Tallaire, A ;

Sussmann, RS ;

Collins, AT ;

Silva, F ;

Pace, E .

APPLIED PHYSICS LETTERS, 2005, 86 (21) :1-3

[5] General temperature dependence of solar cell performance and implications for device modelling [J].

Green, MA .

PROGRESS IN PHOTOVOLTAICS, 2003, 11 (05) :333-340

[6] Peculiarity of depletion region in diamond pn-junction [J].

Koide, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (11) :6800-6803

[7] Diamond photodetector response to deep UV excimer laser excitation [J].

Lansley, SP ;

McKeag, RD ;

Whitfield, MD ;

Rizvi, N ;

Jackman, RB .

DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) :677-681

[8] Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact [J].

Liao, MY ;

Koide, Y ;

Alvarez, J .

APPLIED PHYSICS LETTERS, 2005, 87 (02)

[9] Thermal stability of diamond photodiodes using tungsten carbide as Schottky contact [J].

Liao, MY ;

Alvarez, J ;

Koide, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (11) :7832-7838

[10] Conventional n-type doping in diamond: state of the art and recent progress [J].

Nesladek, M .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (02) :R19-R27