A3B5 nanowhiskers:: MBE growth and properties

被引：5

作者：

Cirlin, GE

Tonkikh, AA

Samsonenko, YB

Soshnikov, IP

Polyakov, NK

Dubrovskli, VG

Ustinov, VM

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 190103, Russia

[3] Russian Acad Sci Res & Educ, St Petersburg Physico Techn Ctr, St Petersburg 195220, Russia

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 2006年 / 56卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

molecular beam epitaxy; nanowhiskers; GaAs; structural properties;

D O I：

10.1007/s10582-006-0060-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The structural properties of GaAs nanowhiskers (NWs) grown by molecular beam epitaxy (MBE) are investigated. Under optimal growth conditions, the aspect ratio of MBE grown GaAs NWs is higher than 100. The maximum length of NWs is several times (up to 10) larger than the effective thickness of deposited GaAs. A kinetic model of the diffusion-induced NW growth is used to predict the dependence of NW length on the technologically controlled MBE growth conditions. The obtained results demonstrate that the NW growth is controlled by the adatom diffusion towards their tip rather than by the conventional vapor-liquid-solid mechanism. The growth conditions influence on the NW morphology may be used for the controlled fabrication of NWs by MBE for different applications.

引用

页码：13 / 20

页数：8

共 14 条

[1] Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].