Preparation of the US semiconductor nanofibril by UV irradiation

被引：28

作者：

Wu, SD ^{[1
]}

Zhu, ZG ^{[1
]}

Zhang, ZP ^{[1
]}

Zhang, L ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Internal Frict & Defects Solids Lab, Hefei 230031, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 90卷 / 1-2期

关键词：

cadmium sulfide (CdS); nanofibril; ultraviolet irradiation; X-ray diffraction; transmission electron microscopy; X-ray energy dispersion spectroscopy;

D O I：

10.1016/S0921-5107(01)00923-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The cadmium sulfide (CdS) semiconductor nanofibrils have been prepared by a convenient ultraviolet irradiation method at room temperature. Cadmium Sulphate was used as the metal ion sources. Sodium thiosulfate was used as the sulfur source. Hydroxyethyl cellulose (HEC) can act as not only the capping materials but also soft templates in the solution. It was found that not only the concentrations of Cd2+ ions and S2O32- ions but also irradiation time play important roles in the shape-controlled synthesis of the US nanomaterials in the solution containing 1% HEC. X-ray diffractometer was used to characterize the products. and transmission electron microscopy (TEM) to determine their morphologhy, and X-ray energy dispersion spectroscopy, to determine their chemical composition. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：206 / 208

页数：3

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