Vanadium oxides thin films grown on rutile TiO2(110)-(1 x 1) and (1 x 2) surfaces

被引：60

作者：

Guo, Q ^{[1
]}

Lee, S ^{[1
]}

Goodman, DW ^{[1
]}

机构：

[1] Texas A&M Univ, Dept Chem, College Stn, TX 77842 USA

来源：

SURFACE SCIENCE | 1999年 / 437卷 / 1-2期

关键词：

Auger electron spectroscopy; electron energy loss spectroscopy (EELS); low energy electron diffraction (LEED); X-ray photoelectron spectroscopy; vanadium oxide; titanium oxide; metal-insulator surfaces; single crystal epitaxy;

D O I：

10.1016/S0039-6028(99)00674-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Vanadium oxides on rutile TiO2(110)-(1 x 1) and (1 x 2) surfaces have been prepared under ultrahigh vacuum conditions by evaporation of vanadium in background O-2 and characterized by various vacuum surface analytical techniques. Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), high-resolution electron energy loss spectroscopy (HREELS) and X-ray photoelectron spectroscopy (XPS) including core-level and X-ray-induced valence band, indicate the formation of V2O3 on both substrates at vanadia coverages greater than one monolayer equivalent (MLE). The dispersion of vanadia is higher on the (1 x 2) surface than on the (1 x 1) surface. At lower coverages <1 MLE, the interface shows two chemical states of vanadium, V3+ and V4+. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：38 / 48

页数：11

共 40 条

[1] Electron energy-loss spectroscopy study of the metal-insulator transition in VO2 [J].