Quantum interference control of currents in CdSe with a single optical beam

被引：54

作者：

Laman, N ^{[1
]}

Shkrebtii, AI ^{[1
]}

Sipe, JE ^{[1
]}

van Driel, HM ^{[1
]}

机构：

[1] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 17期

关键词：

D O I：

10.1063/1.125084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that ballistic current generation can occur in a semiconductor via quantum interference between absorption pathways for orthogonal polarization components of a single-frequency beam. This effect occurs for a subset of noncentrosymmetric materials, is macroscopically associated with a second-order nonlinear optical susceptibility, and produces current injection linearly proportional to the beam intensity. We demonstrate this in wurtzite CdSe (E-g=1.75 eV) at 295 K using cw and femtosecond optical sources of wavelength 600-750 nm (2.07-1.66 eV). The intensity and spectral dependence are in reasonable agreement with a first-principles calculation. Continuous current density of 30 mu A cm(-2) is produced for 60 mW cm(-2) intensity at 633 nm. (C) 1999 American Institute of Physics. [S0003-6951(99)00843-8].

引用

页码：2581 / 2583

页数：3

共 14 条

[1] Coherent control of photocurrent generation in bulk semiconductors [J].