Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration

Optically pumped lasing from InGaN/GaN single heterojunctions (SH) was observed in an edge emitting configuration at 77 K. The heterojunctions were grown by atmospheric pressure metalorganic chemical vapor deposition on c-plane sapphire substrates. The frequency tripled output of a mode-locked titanium:sapphire laser with a pulse width of 250 fs, operating at 280 nm, was used as the photoexcitation source. The nonlinear dependence of output emission intensity on input power density, the observations of a strongly polarized output emission, and distinct Fabry-Perot modes are discussed. (C) 1997 American Institute of Physics.