A model for the non-steady-state temperature behaviour of thermoelectric cooling semiconductor devices

被引：12

作者：

Taylor, PJ ^{[1
]}

Jesser, WA ^{[1
]}

Rosi, FD ^{[1
]}

Derzko, Z ^{[1
]}

机构：

[1] USA,CECOM,NIGHT VIS & ELECT SENSORS DIRECTORATE,FT BELVOIR,VA 22060

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 04期

关键词：

D O I：

10.1088/0268-1242/12/4/018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple, easily applied model describing the non-steady-state temperature behaviour of thermoelectric cooling semiconductor devices is derived from consideration of the heat flows arising from thermal conductivity, the Peltier effect and Joule heating in a typical thermoelectric cooling device. The derived model is tested by comparison with the measured performance of a thermoelectric cooling device constructed for this study. The model is shown to accurately predict device behaviour to a statistical confidence limit of 99% for the given device criteria and experimental conditions.

引用

页码：443 / 447

页数：5

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