High-resolution transmission electron microscopy investigation of a stacking fault in beta-Si3N4

被引:3
作者
Ning, XG [1 ]
Wilkinson, DS [1 ]
Weatherly, GC [1 ]
Ye, HQ [1 ]
机构
[1] ACAD SINICA,INST MET RES,ATOM IMAGING SOLIDS LAB,SHENYANG 110015,PEOPLES R CHINA
基金
中国国家自然科学基金;
关键词
D O I
10.1023/A:1018541631100
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-resolution transmission electron microscopy images of stacking faults on (001) and (<(1)over bar 01>) planes in a beta-Si3N4 whisker were obtained and compared to image simulations. This procedure showed that the atomic structure of the four atomic planes around the (001) stacking fault plane in the beta-phase is very similar to that of the unit cell of alpha-Si3N4 crystal. The stacking fault was observed to climb under electron irradiation in the microscope.
引用
收藏
页码:1431 / 1436
页数:6
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