Compliant substrates for heteroepitaxial semiconductor devices: Theory, experiment, and current directions

被引：28

作者：

Ayers, J. E. ^{[1
]}

机构：

[1] Univ Connecticut, Dept Elect & Comp Engn, Storrs, CT 06269 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 10期

关键词：

compliant substrates; heteroepitaxy; silicon-on-insulator; twist bonded; wafer bonding; universal compliant trench substrates; critical layer thickness;

D O I：

10.1007/s11664-008-0504-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This review paper presents important findings relative to the use of compliant substrates for mismatched heteroepitaxial devices, including the theoretical background, experimental results, and the directions for current efforts. Theories for relative compliance and absolute compliance are presented. Key experimental results are summarized for a number of compliant substrate technologies, including cantilevered membranes, silicon-on-insulator, twist bonding, and glass bonding. Two approaches of current interest, layer transfer and universal compliant trench (UCT) substrates, are presented as potential solutions to the problem of limited absolute compliance in planar compliant substrates attached to handle wafers.

引用

页码：1511 / 1523

页数：13

共 47 条

[1]

Ayers J.E., 2007, Heteroepitaxy of Semiconductors: Theory, Growth and Characterization

[2]

AYERS JE, 2007, UNIVERSAL COMP UNPUB

[3] Critical layer thickness enhancement of InAs overgrowth on porous GaAs [J].

Beji, L ;

Ismail, B ;

Sfaxi, L ;

Hassen, F ;

Maaref, H ;

Ben Ouada, H .

JOURNAL OF CRYSTAL GROWTH, 2003, 258 (1-2) :84-88

[4] Compliant substrates: a review on the concept, techniques and mechanisms [J].

Bourret, A .

APPLIED SURFACE SCIENCE, 2000, 164 :3-14

[5] Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates [J].

CarterComan, C ;

BicknellTassius, R ;

Benz, RG ;

Brown, AS ;

Jokerst, NM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (02) :L29-L31

[6] Strain accommodation in mismatched layers by molecular beam epitaxy: Introduction of a new compliant substrate technology [J].

CarterComan, C ;

Brown, AS ;

Jokerst, NM ;

Dawson, DE ;

BicknellTassius, R ;

Feng, ZC ;

Rajkumar, KC ;

Dagnall, G .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (07) :1044-1048

[7] Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate [J].

Chen, CC ;

Yu, BH ;

Liu, JF ;

Cao, JQ ;

Zhu, DZ ;

Liu, ZH .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 239 (04) :433-439

[8] III-V compliant substrates implemented by nanocavities introduced by ion implantation [J].

Chicoine, M ;

Beaudoin, C ;

Roorda, S ;

Masut, RA ;

Desjardins, P .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[9] OVERCOMING THE PSEUDOMORPHIC CRITICAL THICKNESS LIMIT USING COMPLIANT SUBSTRATES [J].

CHUA, CL ;

HSU, WY ;

LIN, CH ;

CHRISTENSON, G ;

LO, YH .

APPLIED PHYSICS LETTERS, 1994, 64 (26) :3640-3642

[10] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].

DODSON, BW ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1325-1327

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