Ledge effects on dislocation emission from a crack tip: A first-principles study for silicon

被引:27
作者
Juan, YM [1 ]
Sun, YM [1 ]
Kaxiras, E [1 ]
机构
[1] HARVARD UNIV, DEPT PHYS, CAMBRIDGE, MA 02138 USA
关键词
D O I
10.1080/095008396180704
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Extensive recent efforts to understand the intrinsic brittleness or ductility of materials have focused on crack-blunting mechanisms using the Peierls stress concept. So far, the effects due to newly created ledge surface during crack propagation have been either ignored or included within some semiempirical approximation. Using silicon as a prototypical brittle solid, we show that the energy associated with a newly created ledge surface at a crack tip can be obtained from first-principles calculations. We incorporate these results into a continuum theory of critical loading of cracks by assuming an evanescent force law for the surface effects. Our results indicate that inclusion of surface ledge effects can change the values of the critical load by up to 20%.
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收藏
页码:233 / 240
页数:8
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