Nucleation of SiC on Si and their relationship to nano-dot formation: I. Experimental investigations

被引：1

作者：

Scharmann, F ^{[1
]}

Pezoldt, J ^{[1
]}

机构：

[1] TU Ilmenau, Inst Festkorperelekt, D-96864 Ilmenau, Germany

来源：

FIFTH INTERNATIONAL WORKSHOP ON NONDESTRUCTIVE TESTING AND COMPUTER SIMULATIONS IN SCIENCE AND ENGINEERING | 2002年 / 4627卷

关键词：

epitaxy; molecular beam; nucleation; RHEED; silicon; silicon carbide;

D O I：

10.1117/12.456259

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Using in situ reflection high energy electron diffraction (RHEED), ex situ atomic force microscopy (AFM) and transmission electron microscopy (TEM) the nucleation behaviour of silicon carbide on silicon during the interaction of elemental carbon with silicon surfaces was investigated. The critical island sizes and the growth mechanisms leading to nano-dot formation were determined.

引用

页码：160 / 164

页数：5

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