Radiation hardness of silicon detectors manufactured on wafers from various sources

被引：9

作者：

Dezillie, B ^{[1
]}

Bates, S ^{[1
]}

Glaser, M ^{[1
]}

Lemeilleur, F ^{[1
]}

Leroy, C ^{[1
]}

机构：

[1] UNIV MONTREAL, MONTREAL, PQ, CANADA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 388卷 / 03期

关键词：

D O I：

10.1016/S0168-9002(97)00005-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depiction voltage of FZ and epitaxial detectors as a function of fluence and of time after 10(14) cm(-2) proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented.

引用

页码：314 / 317

页数：4

共 5 条

[1]

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[2]

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[4] ELECTRICAL-PROPERTIES AND CHARGE COLLECTION EFFICIENCY FOR NEUTRON-IRRADIATED P-TYPE AND N-TYPE SILICON DETECTORS [J].

LEMEILLEUR, F ;

GLASER, M ;

HEIJNE, EHM ;

JARRON, P ;

OCCELLI, E ;

RIOUX, J .

NUCLEAR PHYSICS B, 1993, :415-424

[5]

LEROY C, 1994, P 4 INT C CAL HIGH E, P627

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