New n-dopable thiophene based polymers

被引：11

作者：

Bongini, A

Barbarella, G

Favaretto, L

Sotgiu, G

Zambianchi, M

Mastragostino, M

Arbizzani, C

Soavi, F

机构：

[1] Univ Bologna, Dipartimento Chim G Ciamician, I-40126 Bologna, Italy

[2] CNR, Area Ric, ICOCEA, I-40129 Bologna, Italy

[3] Univ Palermo, Dipartimento Chim Fis, I-90123 Palermo, Italy

来源：

SYNTHETIC METALS | 1999年 / 101卷 / 1-3期

关键词：

electrochemical polymerization; electrochemical doping; polythiophene and derivatives; low-bandgap conjugated polymers; semi-empirical models and model calculations; UV-Vis-NIR absorption;

D O I：

10.1016/S0379-6779(98)00773-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

New conjugated polymers containing variable amounts of thienyl and thienyl-S,S-dioxide units have been prepared by chemical or electrochemical polymerization of the appropriate substrates. The presence of the thienyl S,S-dioxide units leads to the decrease of the LUMO energies with respect to those of the 'all thienyl' counterparts. Electrochemical and spectro electrochemical data of n-doping of these materials are reported.

引用

页码：13 / 14

页数：2

共 11 条

[1] Oligothiophene S,S-dioxides: towards n-type semiconductor oligothiophenes? [J].