Indium-doped zinc oxide nanobelts

被引：212

作者：

Jie, JS

Wang, GZ ^{[1
]}

Han, XH

Yu, QX

Liao, Y

Li, GP

Hou, JG

机构：

[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2004年 / 387卷 / 4-6期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/j.cplett.2004.02.045

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In-doped ZnO nanobelts were fabricated by thermal evaporation with assistance of gold catalyst. The nanobelts have high crystal quality and grow along [10 (1) over bar0] direction with (0001) dominated surface, and have an average In:Zn value of 1:30. A growth mechanism based on VLS is proposed to understand the nanobelts growth, explaining Au particles are only found at the ends of short narrow part of the nanobelts that are mostly uniform broad flat. The ZnO UV emission peak redshifting about 200 meV after doping gives an estimate of the carrier density in the doped ZnO nanobelts can be as high as 7 x 10(19) cm(-3). (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：466 / 470

页数：5

共 32 条

[1] Optically pumped lasing of ZnO at room temperature [J].