Effects of etch barrier densification on step and flash imprint lithography

被引：30

作者：

Johnson, S

Burns, R

Kim, EK

Dickey, M

Schmid, G

Meiring, J

Burns, S

Willson, CG ^{[1
]}

Convey, D

Wei, Y

Fejes, P

Gehoski, K

Mancini, D

Nordquist, K

Dauksher, WJ

Resnick, DJ

机构：

[1] Univ Texas, Austin, TX 78712 USA

[2] Motorola Labs, Tempe, AZ 85284 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 06期

关键词：

D O I：

10.1116/1.2102971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Previous work with the mechanical properties of step and flash imprint lithography etch barrier materials has shown bulk volumetric shrinkage trends that could impact imprinted feature dimensions and profile. This article uses mesoscopic and finite element modeling techniques to model the behavior of the etch barrier during polymerization. Model results are then compared to cross section images of template and etch barrier. Volumetric shrinkage is seen to impact imprinted feature profiles largely as a change in feature height. (c) 2005 American Vacuum Society.

引用

页码：2553 / 2556

页数：4

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