Magnetic-field-induced resonant tunneling in parallel two-dimensional systems

被引：15

作者：

Ihn, T

Carmona, H

Main, PC

Eaves, L

Henini, M

机构：

[1] Department of Physics, University of Nottingham

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.54.R2315

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The magnetoresistance at 4.2 K of two spatially remote two-dimensional electron gases is investigated. The magnetic field B is applied parallel to the planes of the two-dimensional electron gases (2DEG's). Tunneling between them occurs above a critical held B,. In a configuration where the current I is perpendicular to B, a resistance resonance is observed at B-c, which is absent when I is parallel to B. This resistance resonance is due to a large difference in the mobilities of the two 2DEG's. A model calculation based on the Boltzmann equation and the symmetry properties of the electron subband dispersion curves reproduces the observed phenomena.

引用

收藏

页码：R2315 / R2318

页数：4

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