GaNHEMT potential for low-noise highly linear RF applications

被引：25

作者：

Khalil, I. ^{[1
]}

Liero, A. ^{[1
]}

Rudolph, M. ^{[1
]}

Lossy, R. ^{[1
]}

Heinrich, W. ^{[1
]}

机构：

[1] Ferdinand Braun Inst, D-12489 Berlin, Germany

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2008年 / 18卷 / 09期

关键词：

amplifier distortion; amplifier noise; cross modulation distortion; distortion; intermodulation distortion (IMD); microwave power field-effect transistor (FET) amplifiers; semiconductor device noise;

D O I：

10.1109/LMWC.2008.2002458

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a study of the capability of gallium-nitride (GaN) high-electron mobility transistors (HEMTs) to achieve low noise and high linearity performance. A packaged GaN REMT was measured in a 50-Omega system at 2 GHz. Noise figures slightly above 1.8 dB were achieved together with a record third-order intercept point of 54 dBm. The same configuration yields a maximum output power of 30 W, with 50% power-added efficiency. This combination of high power and low-noise performance allows the realization of highly linear low-noise amplifiers, which could significantly reduce protection and filter efforts at receiver inputs.

引用

页码：605 / 607

页数：3

共 10 条

[1]

CHA S, 2004, P IEEE INT MICR S, P829

[2]

ELLIS GA, 2004, P IEEE MTT S INT MIC, P153

[3]

KHALIL I, 2007, HIGH FREQUENCY E JUL, P26

[4] Gallium nitride powerbar transistors with via holes fabricated by laser ablation [J].