Impurity segregation in CdZnTe by photoluminescence mapping

被引：2

作者：

Horodysky, P ^{[1
]}

Franc, J ^{[1
]}

Grill, R ^{[1
]}

Hlídek, P ^{[1
]}

Höschl, P ^{[1
]}

机构：

[1] Charles Univ Prague, Fac Math & Phys, Inst Phys, Ke Karlovu 5, Prague 12116 2, Czech Republic

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4 | 2006年 / 3卷 / 04期

关键词：

D O I：

10.1002/pssc.200564659

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Low temperature photoluminescence (PL) mapping is employed to retrospectively monitor the processes taking place during crystal growth. Time evolution of the solidification of the melt is derived from zinc concentration map, which is calculated from energy gap obtained from free-exciton (FX) reabsorption in the PL spectra. Investigation of the distribution of PL intensities of specific defects shows that at least relative segregation coefficients can be calculated. This method has a potential application in preparation and characterization of pure and homogeneous CdZnTe wafers and also in identification of unknown defects.

引用

页码：730 / +

页数：2

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