Pyroelectric Ba0.8Sr0.2TiO3 thin films derived from a 0.05 M solution precursor by sol-gel processing

被引：34

作者：

Cheng, JG ^{[1
]}

Meng, XJ ^{[1
]}

Tang, J ^{[1
]}

Guo, SL ^{[1
]}

Chu, JH ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 21期

关键词：

D O I：

10.1063/1.125307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tetragonal Ba0.8Sr0.2TiO3 thin films with large columnar grains 100-200 nm in diameter have been prepared on Pt/Ti/SiO2/Si substrates using a 0.05 M solution precursor by sol-gel processing. The ferroelectric phase transition in the prepared Ba0.8Sr0.2TiO3 thin films is broadened, and suppressed to 40 degrees C with a maximum dielectric constant of epsilon(r) (100 kHz) = 680. The observed low dissipation factor tan delta=2.6% and high pyroelectric coefficient p = 4.586 x 10(-4) C/m(2) K at 33 degrees C render the prepared Ba0.8Sr0.2TiO3 thin films promising for uncooled infrared detector and thermal imaging applications. (C) 1999 American Institute of Physics. [S0003-6951(99)05447-9].

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页码：3402 / 3404

页数：3

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