3D quantum dot lattice inside mesoporous silica films

被引：92

作者：

Besson, S

Gacoin, T

Ricolleau, C

Jacquiod, C

Boilot, JP ^{[1
]}

机构：

[1] Ecole Polytech, UMR CNRS 7643, Phys Mat Condensee Lab, Grp Chim Solide, F-91128 Palaiseau, France

[2] CNRS St Gobain Surface Verre & Interfaces, UMR CNRS 125, F-93303 Aubervilliers, France

[3] Univ Paris 06, UMR CNRS 7590, Lab Mineral Cristallog Paris, F-75252 Paris, France

[4] Univ Paris 07, UMR CNRS 7590, Lab Mineral Cristallog Paris, F-75252 Paris 05, France

来源：

NANO LETTERS | 2002年 / 2卷 / 04期

关键词：

D O I：

10.1021/nl015685v

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the synthesis of Us quantum dots inside 3D hexagonal mesoporous silica films using a very simple chemical route that can be generalized to other II-VI semiconductors. X-ray diffraction and electron microscopy characterizations unambiguously demonstrate that the mesoporous structure allows to control the particle size and the organization of US nanoparticles. This leads to the growth of a 3D quantum dot lattice at a large scale.

引用

页码：409 / 414

页数：6

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