Tribological behavior of polycrystalline and single-crystal silicon

被引:34
作者
Gardos, M. N. [1 ]
机构
[1] Hughes Aircraft Co, Electroopt Syst Components & Mat Ctr, El Segundo, CA 90245 USA
关键词
tribometry; single-crystal silicon; Si(100); Si(111); polycrystalline diamond; vacuum; high temperature; surface chemistry; dangling bonds; reconstruction; adsorbates; friction; wear;
D O I
10.1007/BF00156908
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
SEM tribometric experiments were performed with polycrystalline silicon (poly-Si) vs. poly-Si and Si(111) vs. Si(111) interfaces in moderate vacuum to 850 degrees C complementing similar recent experiments on Si(100) vs. Si(100). All friction data agree with a hypothesis associating the wear-and thermal desorption-induced generation and cooling- induced adsorptive passivation of dangling bonds on the sliding surfaces with high and low adhesion and friction, respectively. Strong additional evidence is given for a surface re-and deconstruction-induced, temporary reduction in high temperature friction. The wear rate of the various Si vs. Si specimens (on the order of 10(-12)m(3)/(N m)) specific to the wide temperature range vacuum test regimen is about 104 times higher than that of unpolished PCD films sliding against themselves under multi-GPa unit loads and similar environmental conditions. In contrast, the characteristic load-carrying capacity of the high-wearing Si, regardless of its crystal structure, was found to be only, similar to 1 MPa. The wear mechanism of the various Si crystallinities was heavily influenced by the agglomeration and plowing of the wear debris particles trapped in the contact zone.
引用
收藏
页码:355 / 373
页数:19
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