Electron energy relaxation rate: The influence of acoustic phonon spectrum anisotropy

被引：20

作者：

Jasiukiewicz, C

Karpus, V

机构：

[1] INST SEMICOND PHYS,LT-2600 VILNIUS,LITHUANIA

[2] UNIV WROCLAW,INST THEORET PHYS,PL-50204 WROCLAW,POLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 12期

关键词：

D O I：

10.1088/0268-1242/11/12/003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electron energy relaxation rate due to an interaction with acoustic phonons has been calculated. Three-dimensional and two-dimensional Fermi electron gases in cubic semiconductors are considered. The anisotropy of the phonon spectrum and relevant phonon polarization states are taken into account. The warping of the phonon spectrum is shown to be of importance at low temperatures.

引用

页码：1777 / 1786

页数：10

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