Ferromagnetic GaN:MnAlSi nanowires

被引：23

作者：

Xu, CK

Chun, J

Rho, K

Kim, DE

Kim, BJ

Yoon, S

Han, SE

Kim, JJ

机构：

[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, Kyungbuk, South Korea

[2] Pohang Univ Sci & Technol, Electron Spin Sci Ctr, Pohang 790784, Kyungbuk, South Korea

[3] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 130650, South Korea

[4] Catholic Univ Korea, Dept Phys, Puchon 420743, South Korea

[5] Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 06期

关键词：

D O I：

10.1063/1.2174125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fabrication of crystalline Al-codoped GaN:Mn nanowires with a Mn doping rate of approximately 7 at. % is reported. The magnetism measurements show that the Curie temperature is above 350 K. X-ray and electron diffractions do not show the presence of any secondary magnetic phases. The electrical transport measurement indicates that the nanowires are of n-type semiconductor.

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页数：4

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