Field emission interferometry with the scanning tunneling microscope

被引：19

作者：

Caamaño, AJ

Pogorelov, Y

Custance, O

Méndez, J

Baró, AM

Veuillen, JY

Gómez-Rodríguez, JM

Sáenz, JJ

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain

[2] Univ Autonoma Madrid, Inst Nicolas Cabrera, E-28049 Madrid, Spain

[3] Univ Porto, Dept Fis, P-4150 Oporto, Portugal

[4] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France

来源：

SURFACE SCIENCE | 1999年 / 426卷 / 01期

关键词：

electron-solid interactions; scattering; diffraction; field emission; field ionization; lead; scanning tunneling microscopy; semi-empirical models and model calculations; silicon; surface electronic phenomena (work function; surface potential; surface states; etc.);

D O I：

10.1016/S0039-6028(99)00346-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A scanning tunneling microscope, operated in the near field emission regime, is used to obtain the phases of very low energy electrons reflected from a sample surface. A simple theoretical model shows that the spectrum of the electron standing waves, formed in the vacuum gap between the tip probe and the sample, is directly related to the complex amplitudes of the reflected electron waves. The surface sensitivity of the interferometric spectra is demonstrated in the analysis of different reconstructions of the Pb/Si(111) system. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：L420 / L425

页数：6

共 43 条

[1] Nanometer-scale lithography on Si(001) using adsorbed H as an atomic layer resist [J].