Spontaneous polarization and piezoelectric constants of III-V nitrides

被引：2695

作者：

Bernardini, F ^{[1
]}

Fiorentini, V ^{[1
]}

Vanderbilt, D ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,DEPT PHYS & ASTRON,PISCATAWAY,NJ 08845

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.56.R10024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids. The piezoelectric constants are found to be up to ten times larger than in conventional III-V and II-VI semiconductor compounds and comparable to those of ZnO. Further properties at variance with those of conventional III-V compounds are the sign of the piezoelectric constants (positive as in II-VI compounds) and the very large spontaneous polarization. [S0163-1829(97)51740-1].

引用

页码：10024 / 10027

页数：4

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