Nonlinear theory of the current instability in a ballistic field-effect transistor

被引:62
作者
Dmitriev, AP
Furman, AS
Kachorovskii, VY
机构
[1] A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194 021 St. Petersburg
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 19期
关键词
D O I
10.1103/PhysRevB.54.14020
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the nonlinear evolution of the current instability in a ballistic field-effect transistor. We show that in the case of small increments, instability results in the establishment of stationary nonlinear oscillations. The amplitude of the oscillations is calculated. We predict peculiarities in the current-voltage characteristic of the transistor. In particular, the differential resistance at zero frequency should show a large step at the instability threshold.
引用
收藏
页码:14020 / 14025
页数:6
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