Offset of the electrical characteristics of alternating-current thin-film electroluminescent devices

被引:4
作者
Shih, S
Keir, PD
Hitt, J
Wager, JF
机构
[1] Dept. of Elec. and Comp. Engineering, Ctr. for Advanced Materials Research, Oregon State, University, Corvallis
关键词
D O I
10.1063/1.117622
中图分类号
O59 [应用物理学];
学科分类号
摘要
Offset is observed in the charge-voltage (Q-V) or internal charge-phosphor field (Q-F-p) characteristics of certain alternating-current thin-film electroluminescent (ACTFEL)devices. This offset arises from a displacement along the voltage axis of a transient curve measured across a sense capacitor in the electrical characterization setup. A procedure for adjusting this offset is proposed that allows ACTFEL devices manifesting offset to be meaningfully analyzed. Two possible sources of offset are deduced from simulation and are associated with an asymmetry in the interface state energy depths at the two phosphor-insulator interfaces or with an asymmetry in the location of space charge generation in the phosphor. (C) 1996 American Institute of Physics.
引用
收藏
页码:1921 / 1923
页数:3
相关论文
共 6 条
[1]   INTERNAL CHARGE-PHOSPHOR FIELD CHARACTERISTICS OF ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES [J].
ABUDAYAH, A ;
KOBAYASHI, S ;
WAGER, JF .
APPLIED PHYSICS LETTERS, 1993, 62 (07) :744-746
[2]   MODELING SPACE-CHARGE IN ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES USING A SINGLE-SHEET CHARGE MODEL [J].
KEIR, PD ;
ANG, WM ;
WAGER, JF .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (07) :4668-4680
[3]  
Ono Y.A., 1995, ELECTROLUMINESCENT D
[4]  
PHAM LV, 1994, P SOC PHOTO-OPT INS, V2174, P190, DOI 10.1117/12.172144
[5]  
PHAM LV, 1995, THESIS OREGON STATE
[6]  
SHIH S, 1994, THESIS OREGON STATE