Gate-controlled superconducting proximity effect in carbon nanotubes

被引:214
作者
Morpurgo, AF [1 ]
Kong, J
Marcus, CM
Dai, H
机构
[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
关键词
D O I
10.1126/science.286.5438.263
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The superconducting proximity effect in single-walled carbon nanotubes connected to niobium electrodes was controlled with the use of nearby gates that tune the niobium-nanotube transparency. At 4.2 kelvin, when the transparency was tuned to be high, a dip in the Low-bias differential resistance was observed, indicating a proximity effect mediated by Andreev reflection. When the transparency was tuned to be Low, signatures of Andreev reflection disappeared and only tunneling conduction was observed. Below similar to 4 kelvin, a narrow peak in differential resistance around zero bias appeared superimposed on the Andreev dip, probably as a result of electron-electron interaction competing with the proximity effect.
引用
收藏
页码:263 / 265
页数:3
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