Electronic structure of SnO2(110)-4 x 1 and sputtered SnO2(110) revealed by resonant photoemission

被引：24

作者：

Sinner-Hettenbach, M

Göthelid, M

Weiss, T

Barsan, N

Weimar, U

von Schenck, H

Giovanelli, L

Le Lay, G

机构：

[1] Univ Tubingen, IPC, D-72076 Tubingen, Germany

[2] Royal Inst Technol, S-10044 Stockholm, Sweden

[3] CNRS, CRMC2, F-13288 Marseille, France

来源：

SURFACE SCIENCE | 2002年 / 499卷 / 01期

关键词：

low energy electron diffraction (LEED); synchrotron radiation photoelectron spectroscopy surface electronic phenomena (work function; surface potential; surface states; etc.); tin oxides; low index single crystal surfaces; surface defects;

D O I：

10.1016/S0039-6028(01)01801-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface properties of SnO2(1 1 0)-4 x 1 and sputtered SnO2(1 1 0) were studied comparatively by resonant photoemission of the valence band states in a photon energy range of 60-130 eV. Resonating energetic levels could be observed on the 4 x I reconstructed surface and the resonance behavior could be switched off by sputter treatment. Additionally, the Sn 4d core-levels were recorded at two photon energies in order to allow a statement about the surface's stoichiometry. A tentative explanation of the observed resonance and of the discrepancy between ordered and sputtered surface is given with regard to recent STM results on similar prepared surfaces. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：85 / 93

页数：9

共 23 条

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