Characteristics of ferroelectric SrBi2Ta2O9 thin films grown by ''Flash'' MOCVD

被引：51

作者：

Isobe, C ^{[1
]}

Ami, T ^{[1
]}

Hironaka, K ^{[1
]}

Watanabe, K ^{[1
]}

Sugiyama, M ^{[1
]}

Nagel, N ^{[1
]}

Katori, K ^{[1
]}

Ikeda, Y ^{[1
]}

Gutleben, CD ^{[1
]}

Tanaka, M ^{[1
]}

Yamoto, H ^{[1
]}

Yagi, H ^{[1
]}

机构：

[1] SONY CORP,RES CTR,MAT RES LAB,YOKOHAMA,KANAGAWA 240,JAPAN

来源：

INTEGRATED FERROELECTRICS | 1997年 / 14卷 / 1-4期

关键词：

FATIGUE;

D O I：

10.1080/10584589708019981

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A chemical vapor deposition process for the ferroelectric SrBi2Ta2O9 has been developed utilizing a liquid delivery and flash vaporization technique. Uniform layered perovskite of SrBi2Ta2O9 was formed over 4 inch wafers by the chemical vapor deposition followed by annealing at 800 degrees C in oxygen ambient. The SrBi2Ta2O9 thin film capacitors showed well saturated hysteresis loops with remanent polarization (2Pr) and coercive field (Ec) of up to 21.3 (mu C/cm(2)) and 47.2 (kV/cm), respectively. The SrBi2Ta2O9 capacitors with platinum electrodes showed fatigue free characteristics after switching of 1 x 10(10) cycles. The chemical vapor deposition technique demonstrated excellent conformal coating of SrBi2Ta2O9 film on 0.5 mu m line-and-space patterns. These performances will meet the requirements for high-density nonvolatile memory devices.

引用

页码：95 / 103

页数：9

共 10 条

[1]

AMI T, IN PRESS MAT RES SOC

[2] FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].

DEARAUJO, CAP ;

CUCHIARO, JD ;

MCMILLAN, LD ;

SCOTT, MC ;

SCOTT, JF .

NATURE, 1995, 374 (6523) :627-629

[3]

GARDINER RA, 1994, MATER RES SOC SYMP P, V335, P221

[4] CHARACTERISTIC CHANGE DUE TO POLARIZATION FATIGUE OF SOL-GEL FERROELECTRIC PB(ZR0.4TI0.6)O-3 THIN-FILM CAPACITORS [J].

MIHARA, T ;

WATANABE, H ;

DEARAUJO, CAP .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5281-5286

[5]

MIHARA T, 1995, JPN J APPL PHYS, V34, P533

[6]

RODRIGUEZ MA, 1996, P 8 INT S INT FERR T, pC20

[7]

SOLAYAPPAN N, 1996, P 8 INT S INT FERR T, pC58

[8] ELECTRONIC DOMAIN PINNING IN PB(ZR,TI)O3 THIN-FILMS AND ITS ROLE IN FATIGUE [J].

WARREN, WL ;

DIMOS, D ;

TUTTLE, BA ;

NASBY, RD ;

PIKE, GE .

APPLIED PHYSICS LETTERS, 1994, 65 (08) :1018-1020

[9] PREPARATION OF FERROELECTRIC THIN-FILMS OF BISMUTH LAYER STRUCTURED COMPOUNDS [J].

WATANABE, H ;

MIHARA, T ;

YOSHIMORI, H ;

DEARAUJO, CAP .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5240-5244

[10]

Yoo I. K., 1993, Mater. Res. Soc. Proc, V310, P165

← 1 →