High-efficiency polymer light-emitting diodes based on poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] with plasma-polymerized CHF3-modified indium tin oxide as an anode -: art. no. 033512

被引：24

作者：

Hsiao, CC ^{[1
]}

Chang, CH ^{[1
]}

Jen, TH ^{[1
]}

Hung, MC ^{[1
]}

Chen, SA ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 30043, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 03期

关键词：

D O I：

10.1063/1.2165192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that introducing a thin CFx film formed by plasma polymerization of CHF3 on an indium tin oxide (ITO) anode surface for a polymer light-emitting diode with the structure, ITO/CFx/poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene](MEH-PPV)/Ca/Al, can lead to a high device performance (5.1 cd/A and 24 000 cd/m(2)). The high device performance can be attributed to a better balance between hole and electron fluxes, resulting from a formation of interfacial dipole at the CFx/MEH-PPV interface to provide a hole blocking effect and an enhancement of electron/hole recombination.

引用

页码：1 / 3

页数：3

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