Q(bd)(-) dependencies of ultrathin gate oxides on large area capacitors.

In this paper a systematic study of the dependence of intrinsic Q(bd)(-) distributions (gate injection) on oxide thickness (3.5 - 5.7nm), area (0.04 - 12.25 mm(2)) and current density (-0.3 to -250 mA/cm(2)) is reported. The oxides were grown with a similar optimized diluted oxygen furnace process. An increased dependence of Q(bd)(-) to area and current density is noticed as the oxide thickness decreases in the ultrathin region. A model is proposed in which initially created, electrical stress induced, local traps and a decreased total amount of additional traps to initiate breakdown account for the shown dependencies.