Tailoring of high-Tc Josephson junctions by doping their electrodes

被引：33

作者：

Schneider, CW ^{[1
]}

Schulz, RR ^{[1
]}

Goetz, B ^{[1
]}

Schmehl, A ^{[1
]}

Bielefeldt, H ^{[1
]}

Hilgenkamp, H ^{[1
]}

Mannhart, J ^{[1
]}

机构：

[1] Univ Augsburg, Inst Phys, Ctr Elect Correlat & Magnetism, D-86135 Augsburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 06期

关键词：

D O I：

10.1063/1.124534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Appropriate doping of the electrodes of high-T-c Josephson junctions provides a means to systematically adjust the junctions' electronic properties. This is demonstrated for the exemplary case of grain boundary junctions in bicrystalline Ca-doped YBa2Cu3O7-delta films. It is found that the critical current density is strongly increased and the normal state resistivity significantly reduced in comparison with the values obtained for equivalent junctions in undoped films. (C) 1999 American Institute of Physics. [S0003-6951(99)04332-6].

引用

页码：850 / 852

页数：3

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