Influence of growth mode on the structural, optical, and electrical properties of In-doped ZnO nanorods

被引：30

作者：

Jung, M. N. ^{[1
]}

Koo, J. E. ^{[1
]}

Oh, S. J. ^{[1
]}

Lee, B. W. ^{[2
]}

Lee, W. J. ^{[3
]}

Ha, S. H. ^{[4
]}

Cho, Y. R. ^{[4
]}

Chang, J. H. ^{[1
]}

机构：

[1] Korea Maritime Univ, Major Nanosemicond, Pusan 606791, South Korea

[2] Korea Maritime Univ, Dept Mat Engn, Pusan 606791, South Korea

[3] Dong Eui Univ, Elect Ceram Ctr, Pusan 614714, South Korea

[4] Pusan Natl Univ, Div Mat Sci & Engn, Pusan 609735, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期

关键词：

carrier density; electron field emission; Hall effect; II-VI semiconductors; indium; nanostructured materials; photoluminescence; semiconductor growth; solid solubility; wide band gap semiconductors; X-ray diffraction; zinc compounds; DEPOSITION; MECHANISM;

D O I：

10.1063/1.3064919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth mechanism of In-doped ZnO (ZnO:In) nanorods grown on AuGe/Si(111) substrates has been investigated. Unlike to general vapor-liquid-solid mechanism, the adatom kinetics on the surface determines the length-diameter relationship [L(D)], initial nuclei size (D(*)), and spatial distribution of impurity atoms. The incorporated In-concentration was estimated to be within solid solubility limit of ZnO in terms of x-ray diffraction analysis, but the evolution of photoluminescence peak position and intensity revealed an evidence of extrinsic carrier increment. Hall-effect measurement was used to evaluate the carrier concentration of ZnO:In nanorods.

引用

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