Structural and transport properties of Ba8Ga16SixGe30-x clathrates

被引:78
作者
Martin, J [1 ]
Erickson, S
Nolas, GS
Alboni, P
Tritt, TM
Yang, J
机构
[1] Univ S Florida, Dept Phys, Tampa, FL 33620 USA
[2] Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA
[3] Gen Motors R&D Ctr, Mat & Proc Lab, Warren, MI 48090 USA
关键词
D O I
10.1063/1.2171775
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the structural, chemical, electrical resistivity, Seebeck coefficient, thermal conductivity, and Hall measurements of polycrystalline Si-Ge type-I clathrates with nominal composition of Ba8Ga16SixGe30-x such that a constant Ga-to-group-IV element ratio is maintained while varying the Si-to-Ge ratio. Electrical transport measurements on the n-type specimens show a modest increase in the absolute Seebeck coefficient and a decrease in electrical resistivity with increasing Si content. This may imply a modification in the band structure with Si substitution and reveals a possible approach for optimizing these materials for thermoelectric applications. These data are compared with those of Ba8Ga16Ge30 and Sr8Ga16SixGe30-x. (c) 2006 American Institute of Physics.
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页数:5
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