Influence of ion current on the growth of carbon films by ion-beam-assisted deposition

被引:6
作者
Gago, R [1 ]
Böhme, O [1 ]
Albella, JM [1 ]
Román, E [1 ]
机构
[1] CSIC, Inst Ciencia Mat, Madrid 28049, Spain
关键词
amorphous carbon; growth; ion-assisted deposition; spectroscopy;
D O I
10.1016/S0925-9635(99)00166-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Amorphous carbon films have been grown by evaporation of graphite with concurrent assistance of Ar+-ion bombardment. The assisting current was obtained with a 3 cm Kauffman ion gun and was varied between 0 and 15 mA, keeping the evaporation rate and assisting voltage constant. The films have been characterised with Auger electron spectroscopy and Raman spectroscopy. The deposition and post-deposition ion bombardment influence the structure of the films. Bombardment during deposition leads to an increase in the sp(3) content up to 40% with an optimum current value around 10 mA. The additional post-deposition bombardment with Ar+ causes damage to the film structure, reducing the sp3 content and increasing the argon content of the film. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:1944 / 1950
页数:7
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