共 52 条
[1]
Analytical modeling of silicon etch process in high density plasma
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1999, 17 (05)
:2485-2491
[4]
On the active surface layer in CF3+ etching of Si:: Atomistic simulation and a simple mass balance model
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
2000, 18 (02)
:411-416
[5]
HYDROCARBON ADSORPTION ON A DIAMOND (100) STEPPED SURFACE
[J].
PHYSICAL REVIEW B,
1994, 49 (07)
:4948-4953
[6]
Allen M. P., 1987, J COMPUTER SIMULATIO, DOI DOI 10.2307/2938686
[7]
INFLUENCE OF POLYMER FORMATION ON THE ANGULAR-DEPENDENCE OF REACTIVE ION-BEAM ETCHING
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1992, 10 (04)
:1212-1216
[8]
IMPORTANCE OF THE MOLECULAR IDENTITY OF ION SPECIES IN REACTIVE ION ETCHING AT LOW ENERGIES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1994, 12 (04)
:1425-1430
[9]
BRENNER DW, 1992, AM CERAM SOC BULL, V71, P1821
[10]
Brenner DW, 2000, PHYS STATUS SOLIDI B, V217, P23, DOI 10.1002/(SICI)1521-3951(200001)217:1<23::AID-PSSB23>3.0.CO