Initial H2O-induced oxidation of Si(100)-(2x1)

被引：189

作者：

Weldon, MK

Stefanov, BB

Raghavachari, K

Chabal, YJ

机构：

[1] Bell Laboratories, Lucent Technologies, Murray Hill, NJ

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.79.2851

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Surface infrared absorption spectroscopy and density functional cluster calculations are used to definitively demonstrate that the Si-Si dimer bond is the target for the initial insertion of oxygen into the Si(100)-(2 x 1) surface, following H2O exposure and annealing. This reaction, in turn, facilitates the subsequent incorporation of O into the Si backbonds, thereby promoting (local) oxidation.

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页码：2851 / 2854

页数：4

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