The chemical and structural origin of efficient p-type doping in P3HT

被引：274

作者：

Duong, Duc T. ^{[1
]}

Wang, Chenchen ^{[1
]}

Antono, Erin ^{[1
]}

Toney, Michael F. ^{[2
]}

Salleo, Alberto ^{[1
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA

来源：

ORGANIC ELECTRONICS | 2013年 / 14卷 / 05期

基金：

美国国家科学基金会;

关键词：

Conjugated polymers; Doping; Organic electronics; Thin films; Organic semiconductors; CHARGE-TRANSFER ABSORPTION; ORGANIC ELECTRONICS; CONJUGATED POLYMERS; TRANSPORT; COMPLEX; VOLTAGE; DEVICES; LAYERS; FILMS;

D O I：

10.1016/j.orgel.2013.02.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the chemical and structural properties of solution-processed thin films of P3HT blended with p-type dopant F4TCNQ. The maximum in-plane electrical conductivity of doped films is observed at a molar doping fraction of 0.17, in agreement with the binding mechanism of F4TCNQ: P3HT complexes. Through the use of X-ray diffraction, a previously unreported crystalline phase is observed for P3HT films doped above a critical threshold concentration. This crystalline phase involves the incorporation of F4TCNQ molecules into ordered polymer regions and ultimately improves charge dissociation, leading to higher carrier density in thin film. Finally, optical absorption and X-ray diffraction reveal that the chemical state of P3HT in solution has a dramatic impact on the electrical and structural properties of the blended films. (C) 2013 Published by Elsevier B.V.

引用

页码：1330 / 1336

页数：7

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