Characterization of sulfur-doped TiO2 films by RBS/C

被引：9

作者：

Yamamoto, S ^{[1
]}

Takeyama, A ^{[1
]}

Yoshikawa, M ^{[1
]}

机构：

[1] JAERI Takasaki, Dept Mat Dev, Takasaki, Gumma 3701292, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 242卷 / 1-2期

关键词：

X-ray diffraction; laser epitaxy; titanium compounds;

D O I：

10.1016/j.nimb.2005.08.077

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Sulfur-doped titanium dioxide (TiO2) films have been deposited on alpha-Al2O3(0 0 0 1) and Si(I 0 0) substrates by pulsed laser deposition (PLD). To investigate growth condition of sulfur-doped TiO2 films, the various concentration of sulfur in titanium dioxide targets was prepared by annealing titanium disulfide (TiS2) in air up to 400 degrees C. The crystal structure of films and the concentration of doped sulfur were assessed by X-ray diffraction (XRD) and Rutherford backscattering spectroscopy with channeling (RBS/C). It was found that the concentration of sulfur in rutile TiO2 films was mainly influenced by the substrate temperature. Rutile TiO2(100) films contained a few atomic percent sulfur were obtained on ot-Al2O3(0001) at 400 degrees C substrate temperature using an annealed titanium disulfide target. RBS/C analysis showed that doped sulfur atoms in rutile TiO2(100) films were distributed randomly. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：377 / 379

页数：3

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