Formation of quantum dots in twofold cleaved edge overgrowth

被引:23
作者
Grundmann, M
Bimberg, D
机构
[1] Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin
来源
PHYSICAL REVIEW B | 1997年 / 55卷 / 07期
关键词
D O I
10.1103/PhysRevB.55.4054
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The formation of quantum dots at the juncture of three quantum-well planes, which can be fabricated with two-fold cleaved edge overgrowth is predicted. The localization energy of the exciton ground state with respect to the connected quantum wires can exceed 10 meV for the GaAs/AlxGa1-xAs system.
引用
收藏
页码:4054 / 4056
页数:3
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