Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition

被引：15

作者：

Tsai, Mu-Gong ^{[1
]}

Tung, Hsien-Tse ^{[2
]}

Chen, In-Gann ^{[1
]}

Chen, Chia-Chuan ^{[1
]}

Wu, Yun-Fang ^{[1
]}

Qi, Xiaoding ^{[1
]}

Hwu, Yeukuang ^{[2
]}

Lin, Cen-Ying ^{[3
]}

Wu, Ping-Han ^{[3
]}

Cheng, Chung-Wei ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

[2] Acad Sinica, Inst Phys, Taipei 11529, Taiwan

[3] Ind Technol Res Inst, ITRI South, Tainan 73445, Taiwan

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2013年 / 96卷 / 08期

关键词：

SOLAR-CELLS; LOW-TEMPERATURE; CUINSE2; NANOCRYSTALS; EFFICIENCY; SELENIZATION; NANOPARTICLES; EVAPORATION; PRESSURE; METALS;

D O I：

10.1111/jace.12422

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work reports the crystallization, microstructure, and surface composition of CuIn0.7Ga0.3Se2 (CIGS) thin films grown by femtosecond pulsed laser deposition at different annealing temperatures. The structural and optical properties of the CIGS films were characterized by X-ray diffraction, Raman scattering, UV-visible spectroscopy, and Hall effect measurement. The results indicate that binary crystals of CuSe initially formed on the as-deposited film, but then completely turned into a quaternary chalcopyrite structure after annealing at 400 degrees C. Phase transformation significantly affects the surface morphology, Hall properties, and band gap. Transmission electron microscopy further revealed that an interface between the Mo substrate and CIGS crystallites contains an amorphous layer even at the high temperature of 500 degrees C. For the application of photovoltaic devices, we also report on the photoresponse of both as-deposited and annealed films as demonstrated by preliminary tests.

引用

页码：2419 / 2423

页数：5

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