Ballistic magnetoresistance in perovskite magnetonanocontacts under high-bias voltages

被引：1

作者：

Baszynski, J ^{[1
]}

Tolinski, T ^{[1
]}

Kowalski, W ^{[1
]}

Kowalczyk, A ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 2002年 / 52卷

关键词：

ballistic magnetoresistance; break junctions; manganites;

D O I：

10.1007/s10582-002-0001-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ballistic magnetoresistance is studied in point, contacts prepared by a break junction technique. The La0.7Sr0.3MnO3 ceramic is fixed to nil elastic substrate and a point contact is obtained by a fracture creation using the three point bending mechanism. The percentage change of the resistance in a field switch between 0 and 3.8 kOe is of the order of 1000% at room temperature.

引用

页码：A13 / A16

页数：4

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