Electrons in disordered structures

被引：55

作者：

Mott, NF

机构：

[1] Cavendish Laboratory, Cambridge

来源：

ADVANCES IN PHYSICS | 2001年 / 50卷 / 07期

关键词：

D O I：

10.1080/00018730110102727

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The latest experimental and theoretical work on the behavior of electrons was reviewed in disordered lattices. The Hall coefficient of impurity conduction in silicon and germanium was investigated. No Hall voltage was observed in the hopping region. The results suggested that the state of affairs described can exist without the states in the impurity band becoming localized due to disorder.

引用

页码：865 / 945

页数：81

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