The strain gradient effect in microelectromechanical systems (MEMS)

被引:26
作者
Xue, ZY [1 ]
Saif, MTA [1 ]
Huang, YG [1 ]
机构
[1] Univ Illinois, Dept Mech & Ind Engn, Urbana, IL 61801 USA
基金
美国国家科学基金会; 中国国家自然科学基金;
关键词
microelectromechanical systems (MEMS); size effect; strain gradient plasticity;
D O I
10.1109/84.982860
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Metallic materials display strong size effect when the characteristic length of deformation is on the order of microns. The theory of mechanism-based strain gradient (MSG) plasticity established from the Taylor dislocation model has captured this size dependence of material behavior at the micron scale very well. The strain gradient effect in microelectromechanical systems (MEMS) is investigated in this paper via the MSG plasticity theory since the typical size of MEMS is on the order of microns (comparable to the internal material length in MSG plasticity). Through an example of a digital micromirror device (DMD), it is shown that the strain gradient effect significantly increases the mechanical strain energy in the DMD, and reduces the rotation time of the micromirror. However, the strain gradient has no effect on the critical bias voltage governing the fast rotation of the micromirror.
引用
收藏
页码:27 / 35
页数:9
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